Infineon 17N80C3 800V 17A N Channel MOSFET TO-247 Package Speaker Wire Offices to avoid data and

Offices to avoid data and power loss

1V Operating Temperature -55°C~150°C Storage Temperature -55°C~150°C Package Bridge Diode

Used as a switching device

Pages can be erased in groups of 16 (4KB sector erase)

Brand Samsung/AVX/YAGEO Value 10uF Voltage (Max) 50 Volts Package SMD 1206 Tolerance ± 10% Inner Electrode

Infineon 17N80C3 800V 17A N Channel MOSFET TO-247 Package Speaker Wire Offices to avoid data andThese Power MOSFETs are designed using the company's consolidated strip layout based MESH OVERLAY process. The result is very high voltage Power MOSFETs with outstanding performances. The strengthened layout, coupled with the companys proprietary edge termination structure, gives the lowest Rds(on) per area, unrivalled gate charge, and switching characteristics. Features New revolutionary high voltage technology Ultra low gate charge Periodic